| PART |
Description |
Maker |
| BC369ZL1G BC368 BC368_05 BC368G BC368ZL1 BC368ZL1G |
Amplifier Transistor PNP Silicon(硅PNP放大器晶体管) 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Voltage and Current are Negative
|
ONSEMI[ON Semiconductor]
|
| 2N5679 2N5680 JAN2N5680 |
1000 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
PNP POWER TRANSISTOR SILICON AMPLIFIER
|
MICROSEMI CORP-LAWRENCE
MICROSEMI[Microsemi Corporation]
|
| PH5416 |
PNP high-voltage transistor 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BSR62 BSR62_4 |
PNP Darlington transistor 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
From old datasheet system
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| FCX591TA |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes, Inc.
|
| 2N4890 |
1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
|
MICROSEMI CORP-LAWRENCE
|
| CTLT7410-M621TR |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
CENTRAL SEMICONDUCTOR CORP
|
|
